| PART |
Description |
Maker |
| SBC81206-15 SBC81206VG SBC81206VGGR |
2 DDR2 DIMM support up to 2 GB memory capacity
|
Axiomtek Co., Ltd.
|
| XO63CREANA20M XO63DTEANA24M XO63CREANA40M |
XOSM-533 20M BRE B04 E4 - Bulk
XOSM-533 24M AE B04 E4 - Bulk
XO, Clock, CRYSTAL OSCILLATOR, CLOCK, 40 MHz, HCMOS OUTPUT, HALOGEN FREE AND ROHS COMPLIANT, ULTRA MINIATURE PACKAGE-4
|
Vishay Dale
|
| PC2-5300 PC2-3200 PC2-6400 |
DDR2 SDRAM SODIMM
|
Micron Technology
|
| HYS72T512122HFN-3.7-A HYS72T512022HFN-3.7-A |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM 512M X 72 DDR DRAM MODULE, PDMA240
|
Qimonda AG
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68
1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92
1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
| TF-GENE-5312-A21 TF-GENE-5312-A21-02 TF-GENE-5312- |
Onboard AMD Geode GX 466/533 Series Processors
|
AAEON Technology
|
| ICS9212AF-13LF-IN0 |
533.3 MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO24
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| PCK2002PL_3 PCK2002PL PCK2002PLPW PCK2002PLPWDH-T |
From old datasheet system
PCK2002PL; 533 MHz PCI-X clock buffer
|
NXP Semiconductors
Philips
|
